monolithic microwave integrated circuit中文什么意思

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用"monolithic microwave integrated circuit"造句

單片式微波集成電路

integrated circuit: 【無線電】積體[集成]電路，積分電路。
microwave monolithic integrated circuit: 微波單片集成電路
compatible monolithic integrated circuit: 和諧單石積分電路; 兼容單片集成電路; 兼容性單片混合微電路結(jié)構(gòu)
integrated monolithic circuit: 集成單片電路積體單晶電路
mic monolithic integrated circuit: 單片集成電路

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Tas semiconductor devices - technology approval schedule for monolithic microwave integrated circuits
半導(dǎo)體器件.單片微波集成電路的技術(shù)驗(yàn)收程序
Tas semiconductor devices - part 16 - 10 : technology approval schedule for monolithic microwave integrated circuits
半導(dǎo)體器件.第16 - 10部分:單片型微波集成電路的技術(shù)驗(yàn)收程序
Especially at millimeter - wave frequencies , power available from each monolithic microwave integrated circuit ( mmic ) is limited , and subsequent power combining is required to achieve the desired output power
特別是在毫米波頻段,鑒于單個(gè)單片集成電路可能提供的功率有限,要提高系統(tǒng)的輸出功率就需要采用功率合成技術(shù)。
Monolithic microwave integrated circuit ( mmic ) designs on si substrates have become an important topic in recent years . with constantly increasing frequencies in communications and integrated circuits , there are great demands for low - cost , miniature microwave transmission lines
采用以硅材料為襯底及與ic兼容的微電子機(jī)械( mems )技術(shù)，能夠?qū)崿F(xiàn)微波無源分立元件與信號處理電路的單片集成化，最終形成完整的和智能化的在片系統(tǒng)。
Especially , mesfet devices fabricated on lec si - gaas substrate have been adopted into very large - scale integration ( vlsi ) and monolithic microwave integrated circuit ( mmic ) extensively . therefore , it is necessary to study the influence of defects in substrate material of lec si - gaas on performance of mesfet to meet the need of design and fabrication of gaas ic
以液封直拉半絕緣gaas為襯底的金屬半導(dǎo)體場效應(yīng)晶體管( mesfet )器件是超大規(guī)模集成電路和單片微波集成電路廣泛采用的器件結(jié)構(gòu)，因此研究lec法生長si - gaas ( lecsi - gaas )襯底材料特性對mesfet器件性能的影響，對gaas集成電路和相關(guān)器件的設(shè)計(jì)及制造是非常必要的。